Two New Technologies Bless Samsung's Second-generation 10nm Dram Production Grab Business Opportunities

Attacking DRAM market opportunities, Samsung Electronics announced the mass production of its second generation of 10 nanometer level (1y-nm) 8Gb DDR4 DRAM. The unit uses a high-sensitivity Cell Data Sensing System and an Air Spacer solution for higher performance, lower power consumption, and smaller footprint.

DRAM market is strong, IC Insights predicts DRAM market in 2017 will surge 74%, the largest increase since 1994; the future DRAM is expected to become the largest single product category in the semiconductor industry so far, the output value of up to 7.2 billion US dollars.

To cater to the huge demand in the market, Gyoyoung Jin, president of Samsung's memory division, said the second generation of DDR4 DRAM circuit design and process technology enabled the company to break through the major barriers to DRAM scalability; Samsung will accelerate new product production while Actively expand the first generation of DDR4 DRAM production.

It is reported that Samsung's second generation of 10-nanometer 8Gb DDR4 DRAM production process, the first generation in production efficiency increased by nearly 30%. At the same time, to enhance DRAM performance, the module uses new technology, respectively, for the high-sensitivity cell data sensing system and the "air gap" program, rather than the past EUV technology.

Samsung points out that through the high-sensitivity cell data sensing system, the data stored in each memory cell can be more accurately determined to improve the circuit integration and manufacturing productivity. In the case of the air gap around the word lines, Reduce the parasitic capacitance, to achieve a higher level of miniaturization and fast cell operation.

New technology blessing second-generation 8Gb DDR4 DRAM performance and power-saving benefits by about 10% and 15%; and each pin can run at 3,600 Mbit / s faster than the first generation of 8Gb DDR3 DRAM 3,200 Mbit / s speed, improve more than 10%.

Samsung pointed out that the innovative technology used in the second generation of 10-nanometer DRAM will enable the company to accelerate the advent of future DRAM chips, including DDR5, HBM3, LPDDR5 and GDDR6, for enterprise servers, supercomputers, high performance computing Systems, and mobile devices.

Currently, Samsung has completed the second-generation 8Gb DDR4 DRAM module validation with the CPU maker, and plans to work closely with IT companies around the world to develop more efficient computing systems. In addition to the rapid increase in the second generation of 10-nanometer DRAM production, Samsung will continue to produce more first generation DDR4 DRAMs to meet the growing DRAM market.